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227M00 EP2A15 2SK3299 Z20BDC1 ZPSD211R ON1865 104M1 D42C5
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  inchange semiconductor isc product specification isc silicon pnp power transistor BD316 description excellent safe operating area dc current gain-h fe = 25(min.)@i c = -8a collector-emitter saturation voltage- : v ce(sat )= -1.0 v(max)@ i c = -8a complement to type bd315 applications designed for high quality amplifiers operating up to 100 watts into 4 ohm load. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -80 v v ceo collector-emitter voltage -80 v v ebo emitter-base voltage -7 v i c collector current-continuous -16 a i cm collector current-peak -20 a i b b base current-continuous -5 a p c collector power dissipation@t c =25 200 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 0.875 /w isc website www.iscsemi.cn 1
inchange semiconductor isc product specification isc silicon pnp power transistor BD316 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v ceo(sus) collector-emitter sustaining voltage i c =-200ma; i b =0 b -80 v v ce (sat) collector-emitter saturation voltage i c = -8a; i b = -0.8a b -1.0 v v be (sat) base-emitter saturation voltage i c = -8a; i b = -0.8a b -1.8 v v be( on ) base-emitter on voltage i c = -8a; v ce = -2v -1.5 v i cbo collector cutoff current v cb = -80v; i b = 0 b -1.0 ma i ebo emitter cutoff current v eb = -7v; i c = 0 -1.0 ma h fe-1 dc current gain i c = -8a; v ce = -4v 25 h fe-2 dc current gain i c = -10a; v ce = -4v 15 f t current gain-bandwidth product i c = -1a; v ce = -20v 1 mhz isc website www.iscsemi.cn 2


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